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| Prezzo | Negotiated |
| MOQ | 10pieces |
| Tempo di consegna | 2-15days |
| Marca | Infineon Technologies |
| Luogo d'origine | La Malesia |
| Certification | ROHS |
| Number di modello | BSM50GD120DN2BOSA1 |
| Dettagli d'imballaggio | Imballaggio di serie |
| Termini di pagamento | T/T, Western Union |
| Abilità del rifornimento | 1000pcs |
| Brand Name | Infineon Technologies | Number di modello | BSM50GD120DN2BOSA1 |
| Certification | ROHS | Luogo d'origine | La Malesia |
| Quantità di ordine minimo | 10pieces | Price | Negotiated |
| Termini di pagamento | T/T, Western Union | Abilità del rifornimento | 1000pcs |
| Termine di consegna | 2-15days | Dettagli d'imballaggio | Imballaggio di serie |
| Famiglia | Prodotti a semiconduttori discreti | Categoria | componenti elettronici |
| Serie | Modulo di potere di IGBT | Numero del pezzo basso | BSM50 |
| Dettagli | Transistor di POTERE BASSO ECONO - IGBTs - moduli | Tipo | interamente ponte trifase |
| Descrizione | Pacchetto con il piatto di base metallica isolato | Montaggio del tipo | Attraverso il foro |
| Stoccaggio | In magazzino |
Componenti elettronici del modulo di potere di BSM50GD120DN2 BSM50GD120DN2BOSA1 IGBT
BSM
50
GD
120
DN2
Serise
Descrizione:
•
Modulo
di
potere
• interamente ponte trifase
• Compreso i diodi veloci della libero ruota
• Pacchetto con il piatto di base metallica isolato
Specificazione del modulo di potere di BSM50GD120DN2 BSM50GD120DN2BOSA1 IGBT:
| Categoria | Prodotti a semiconduttori discreti |
| Modulo di potere di IGBT | |
| Mfr | infenion |
| Serie | BSM50 |
| Pacchetto | Metropolitana |
| Numero del pezzo | BSM50GD120DN2 BSM50GD120DN2BOSA1 |
| Montaggio del tipo | Attraverso il foro |
| Pacchetto del dispositivo del fornitore | IGBT |
| ATTRIBUTO | DESCRIZIONE |
|---|---|
| Livello di sensibilità di umidità (MSL) | Venditore indefinito |
| Stato di PORTATA | RAGGIUNGA inalterato |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
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